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From 2d To 3d Photonic Integrated Circuits

by Yasha Yi

~~60,82€~~ 54,74€ 10% OFF

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 This convergence of electronic and photonic circuits presents unique challenges and great opportunities.This book provides an introduction to photonic integrated circuits and the transition from 2D to 3D PICs.
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Parameter-Centric Scaled Fet Devices - Physics Based Perspectives And Attributes

by Nabil Shovon Ashraf

~~47,30€~~ 42,57€ 10% OFF

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 Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
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Visual Analytics For Process Monitoring - From Time Series To Interpretable Visual Representations

by Ibrahim Yousef, R. Bhushan Goplauni e Sirish L. Shah

~~47,30€~~ 42,57€ 10% OFF

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Compound Semiconductor Materials And Devices

by Qiang Li, Tongde Huang, Xinbo Zou, Xing Lu e Zhaojun Liu

33,11€ + 10% CARD

 Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
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Advanced Concepts And Architectures For Plasma-Enabled Material Processing

by Igor Levchenko, Kateryna Bazaka, Oleg O. Baranov e Shuyan Xu

59,61€ + 10% CARD

 Plasma-based techniques are widely and successfully used across the field of materials processing, advanced nanosynthesis, and nanofabrication. The diversity of currently available processing architectures based on or enhanced by the use of plasmas is vast, and one can easily get lost in the opportunities presented by each of these configurations. This mini-book provides a concise outline of the most important concepts and architectures in plasma-assisted processing of materials, helping the reader navigate through the fundamentals of plasma system selection and optimization. Architectures discussed in this book range from the relatively simple, user-friendly types of plasmas produced using direct current, radio-frequency, microwave, and arc systems, to more sophisticated advanced systems based on incorporating and external substrate architectures, and complex control mechanisms of configured magnetic fields and distributed plasma sources.
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Non-Volatile In-Memory Computing By Spintronics

by Hao Yu, Leibin Ni e Yuhao Wang

59,61€ + 10% CARD

 Exa-scale computing needs to re-examine the existing hardware platform that can support intensive data-oriented computing. As a result, by utilizing spintronics, in-memory-based computing has been applied for data encryption and machine learning.
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Low Substrate Temperature Modeling Outlook Of Scaled N-Mosfet

by Nabil Shovon Ashraf

37,09€ + 10% CARD

 In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures.
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Sustaining Moores Law - Uncertainty Leading To A Certainty Of Iot Revolution

by Apek Mulay

37,09€ + 10% CARD

 Sustaining Moore's Law presents a blueprint for sustaining the progress of Moore's Law to bring about IoT Revolution in the global economy.
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The Digital Revolution

by Bob Merritt

37,09€ + 10% CARD

 As technologists, we are constantly exploring and pushing the limits of our own disciplines, and we accept the notion that the efficiencies of new technologies are advancing at a very rapid rate. However, we rarely have time to contemplate the broader impact of these technologies as they impact and amplify adjacent technology disciplines.
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Advances In Reflectometric Sensing For Industrial Applications

by Andrea Cataldo, Egidio De Benedetto e Giuseppe Cannazza

37,09€ + 10% CARD

 This book offers a comprehensive review of innovative measurement and monitoring solutions based on time domain reflectometry (TDR). The basic idea has been to extend the principles of punctual TDR-based monitoring to multi-purpose networks of diffused, sensing elements (SE's), embedded permanently within the systems to be monitored (STBM's).
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New Prospects Of Integrating Low Substrate Temperatures With Scaling-Sustained Device Architectural Innovation

by Mohaiminul Alam, Nabil Shovon Ashraf e Shawon Alam

33,11€ + 10% CARD

 In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (
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Resistive Random Access Memory (Rram)

by Shimeng Yu

33,11€ + 10% CARD

 State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.
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Radiation Imaging Detectors Using Soi Technology

by Ikuo Kurachi e Yasuo Arai

33,11€ + 10% CARD

 However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently.This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors.
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Layout Techniques In Mosfets

by Salvador Pinillos Gimenez

33,11€ + 10% CARD

 This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.

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