Resultados de Pesquisa

INGLÊS

Visual Analytics For Process Monitoring - From Time Series To Interpretable Visual Representations

de Ibrahim Yousef, R. Bhushan Gopaluni e Sirish L. Shah

~~47,30€~~ 42,57€ 10% IMEDIATO

portes grátis

 In the era of big data, process industries face the challenge of analyzing massive and complex data to extract information for effective process monitoring.
INGLÊS

From 2d To 3d Photonic Integrated Circuits

de Yasha Yi

~~60,82€~~ 54,74€ 10% IMEDIATO

portes grátis

 This convergence of electronic and photonic circuits presents unique challenges and great opportunities.This book provides an introduction to photonic integrated circuits and the transition from 2D to 3D PICs.
INGLÊS

From 2d To 3d Photonic Integrated Circuits

de Yasha Yi

~~59,61€~~ 53,65€ 10% IMEDIATO

DISPONIBILIDADE IMEDIATA

 This convergence of electronic and photonic circuits presents unique challenges and great opportunities.This book provides an introduction to photonic integrated circuits and the transition from 2D to 3D PICs.
INGLÊS

Parameter-Centric Scaled Fet Devices - Physics Based Perspectives And Attributes

de Nabil Shovon Ashraf

~~46,36€~~ 41,72€ 10% IMEDIATO

DISPONIBILIDADE IMEDIATA

 Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
INGLÊS

Electrospun Porous Nanofibers - An Introduction

de A. K. Haghi, Ann Rose Abraham, Maria Mathew e Rony Rajan Paul

~~33,11€~~ 29,80€ 10% IMEDIATO

DISPONIBILIDADE IMEDIATA

 This book introduces readers to electrospinning, a nanofabrication technique used to produce nanofibers, and discusses the properties and applications of these nanofibers. The book begins with an overview of the electrospinning process, and strategies for producing nanofibers with different morphologies.
INGLÊS

Parameter-Centric Scaled Fet Devices - Physics Based Perspectives And Attributes

de Nabil Shovon Ashraf

~~47,30€~~ 42,57€ 10% IMEDIATO

portes grátis

 Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
INGLÊS

Superconducting Memory Technologies

de Ahmedullah Aziz e Shamiul Alam

~~46,36€~~ 41,72€ 10% IMEDIATO

DISPONIBILIDADE IMEDIATA

 It covers four main types of superconducting memories: Josephson junction-based, magnetic Josephson junction-based, superconducting memristor-based, and ferroelectric superconducting quantum interference device-based memories.
INGLÊS

Smart Water Resource Management - A Practical Introduction

de A. K. Haghi e Ana Cristina Faria Ribeiro

~~46,36€~~ 41,72€ 10% IMEDIATO

DISPONIBILIDADE IMEDIATA

 Advanced methods for water consumption management can help save water and financial resources.
INGLÊS

Compound Semiconductor Materials And Devices

de Qiang Li, Tongde Huang, Xinbo Zou, Xing Lu e Zhaojun Liu

33,11€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
INGLÊS

Advanced Concepts And Architectures For Plasma-Enabled Material Processing

de Igor Levchenko, Kateryna Bazaka, Oleg O. Baranov e Shuyan Xu

59,61€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 Plasma-based techniques are widely and successfully used across the field of materials processing, advanced nanosynthesis, and nanofabrication. The diversity of currently available processing architectures based on or enhanced by the use of plasmas is vast, and one can easily get lost in the opportunities presented by each of these configurations. This mini-book provides a concise outline of the most important concepts and architectures in plasma-assisted processing of materials, helping the reader navigate through the fundamentals of plasma system selection and optimization. Architectures discussed in this book range from the relatively simple, user-friendly types of plasmas produced using direct current, radio-frequency, microwave, and arc systems, to more sophisticated advanced systems based on incorporating and external substrate architectures, and complex control mechanisms of configured magnetic fields and distributed plasma sources.
INGLÊS

Non-Volatile In-Memory Computing By Spintronics

de Hao Yu, Leibin Ni e Yuhao Wang

59,61€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 Exa-scale computing needs to re-examine the existing hardware platform that can support intensive data-oriented computing. As a result, by utilizing spintronics, in-memory-based computing has been applied for data encryption and machine learning.
INGLÊS

Low Substrate Temperature Modeling Outlook Of Scaled N-Mosfet

de Nabil Shovon Ashraf

37,09€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures.
INGLÊS

Sustaining Moores Law - Uncertainty Leading To A Certainty Of Iot Revolution

de Apek Mulay

37,09€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 Sustaining Moore's Law presents a blueprint for sustaining the progress of Moore's Law to bring about IoT Revolution in the global economy.
INGLÊS

The Digital Revolution

de Bob Merritt

37,09€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 As technologists, we are constantly exploring and pushing the limits of our own disciplines, and we accept the notion that the efficiencies of new technologies are advancing at a very rapid rate. However, we rarely have time to contemplate the broader impact of these technologies as they impact and amplify adjacent technology disciplines.
INGLÊS

Advances In Reflectometric Sensing For Industrial Applications

de Andrea Cataldo, Egidio De Benedetto e Giuseppe Cannazza

37,09€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 This book offers a comprehensive review of innovative measurement and monitoring solutions based on time domain reflectometry (TDR). The basic idea has been to extend the principles of punctual TDR-based monitoring to multi-purpose networks of diffused, sensing elements (SE's), embedded permanently within the systems to be monitored (STBM's).
INGLÊS

New Prospects Of Integrating Low Substrate Temperatures With Scaling-Sustained Device Architectural Innovation

de Mohaiminul Alam, Nabil Shovon Ashraf e Shawon Alam

33,11€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (
INGLÊS

Resistive Random Access Memory (Rram)

de Shimeng Yu

33,11€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.
INGLÊS

Radiation Imaging Detectors Using Soi Technology

de Ikuo Kurachi e Yasuo Arai

33,11€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently.This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors.
INGLÊS

Layout Techniques In Mosfets

de Salvador Pinillos Gimenez

33,11€ + 10% EM CARTÃO

DISPONIBILIDADE IMEDIATA

 This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.

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