10% OFF
Book eBook
language: english
Publisher: TAYLOR & FRANCIS LTD, July of 2001 ‧
371,77€
10% OFF CARD
free shipping
Sell ​​your book
Deals with the design and optimization of transistors made from strained layers. This book covers key technology issues for the growth of strained layers, background theory of the HBT, and how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics.

Applications Of Silicon-Germanium Heterostructure Devices

by G.A (The Queen'S University Of Belfast, Uk) Armstrong e C.K (Indian Institute Of Technology, Kharagpur, India) Maiti

Property Description
ISBN: 9780750307239
Publisher: TAYLOR & FRANCIS LTD
Release Date: July of 2001
Language: English
Dimensions: 156 x 235 x 20 mm
Cover: Hardcover
Pages: 414
Format: Book
Collection: Series In Optics And Optoelectronics
Categories: Books in English > Science > Physical
EAN: 9780750307239