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language: english
Publisher: TAYLOR & FRANCIS LTD, January of 2007 ‧
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Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices.

Strained-Si Heterostructure Field Effect Devices

by L.K Bera, S (University Of Newcastle, Uk) Chattopadhyay e C.K (Indian Institute Of Technology, Kharagpur, India) Maiti

Property Description
ISBN: 9780750309936
Publisher: TAYLOR & FRANCIS LTD
Release Date: January of 2007
Language: English
Dimensions: 156 x 235 x 28 mm
Cover: Hardcover
Pages: 436
Format: Book
Collection: Series In Materials Science And Engineering
Categories: Books in English > Engineering > Electricity and Energy
EAN: 9780750309936