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Strain-Induced Effects In Advanced Mosfets
idioma: inglês
Editor:
SPRINGER VERLAG GMBH, agosto de 2016 ‧
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175,73€
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SINOPSE
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
DETALHES
| Propriedade | Descrição |
|---|---|
| ISBN: | 9783709119334 |
| Editor: | SPRINGER VERLAG GMBH |
| Data de Lançamento: | agosto de 2016 |
| Idioma: | Inglês |
| Dimensões: | 168 x 240 x 20 mm |
| Encadernação: | Capa mole |
| Páginas: | 252 |
| Tipo de produto: | Livro |
| Coleção: | Computational Microelectronics |
| Classificação Temática: |
Livros em Inglês
>
Engenharia
>
Eletricidade e Energia
|
| EAN: | 9783709119334 |
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