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Modelling Of Interface Carrier Transport For Device Simulation

by Dietmar Schroeder

~~97,34€~~ 68,14€ 30% OFF

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 Reviews the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. This book focuses on boundary conditions for semiconductor device simulation. Models for important interfaces are derived within a unified modelling framework of interface charge transport and discussed in the context of device simulation.
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Simulation Of Semiconductor Devices And Processes

~~97,34€~~ 68,14€ 30% OFF

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 Presents the research and development results in the area of numerical process and device simulation. This book covers the following topics: process simulation and equipment modeling, device modeling and simulation of complex structures, device simulation and parameter extraction for circuit models, integration of process, algorithms and software.
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Global Aerospace Monitoring And Disaster Management

by Anatoly N. Perminov, Valery A. Menshikov e Yuri M. Urlichich

~~175,73€~~ 123,01€ 30% OFF

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 In this book, space systems are situated in the global processes of the 21st centuryâ€™s information society and the role that space information systems could play in risk management is determined;
ENGLISH

Strain-Induced Effects In Advanced Mosfets

by Viktor Sverdlov

~~175,73€~~ 123,01€ 30% OFF

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 Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
ENGLISH

Strain-Induced Effects In Advanced Mosfets

by Viktor Sverdlov

171,59€ + 10% CARD

 This book covers modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is explored in devices using analytical k.p and numerical pseudopotential methods. Includes a rigorous overview of transport modeling.
ENGLISH

Analysis And Simulation Of Heterostructure Devices

by Rudiger Quay e Vassil Palankovski

171,59€ + 10% CARD

 The topic of this monograph is the physical modeling of heterostructure devices.
ENGLISH

Intrinsic Point Defects, Impurities, And Their Diffusion In Silicon

by Peter Pichler

330,59€ + 10% CARD

 This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon.
ENGLISH

Deterministic Solvers For The Boltzmann Transport Equation

by Anh-Tuan Pham, Christoph Jungemann e Sung-Min Hong

118,59€ + 10% CARD

 This book, the first comprehensive description of the numerical methods, covers every aspect of the Boltzmann transport equation, including transport in bulk and in inversion layers. It analyzes the issues of stabilization and band structure mapping in detail.
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Non-Equilibrium Green'S Function Method For Nanoscale Device Simulation

by Mahdi Pourfath

118,59€ + 10% CARD

 Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated.
ENGLISH

Stationary Semiconductor Device Equations

by P.A. Markowich

118,59€ + 10% CARD

 Treats the static semiconductor device problem in an "applied mathematics" way. This book analyses the qualitative properties, such as existence and uniqueness of solutions, and quantitative properties, particularly the structure of steady state solutions.
ENGLISH

Hierarchical Device Simulation - The Monte-Carlo Perspective

by Bernd Meinerzhagen e Christoph Jungemann

118,59€ + 10% CARD

 A monograph on physics-based simulations of novel strained Si and SiGe devices. It provides a description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
ENGLISH

Computational Single-Electronics

by Christoph Wasshuber

171,59€ + 10% CARD

 From the reviews: "This is a well written book offering a clear and detailed insight into physical processes and numerical procedures essential to the single-electron dynamics in electro-conducting media." Zentralblatt fur Mathematik und ihre Grenzgebiete
ENGLISH

Microtransducer Cad - Physical And Computational Aspects

by Arokia Nathan e Henry Baltes

59,61€ + 10% CARD

 Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabrication techniques similar to those for standard integrated circuits (ICs).
ENGLISH

Advanced Physical Models For Silicon Device Simulation

by Andreas Schenk

171,59€ + 10% CARD

 Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.
ENGLISH

Modelling Of Interface Carrier Transport For Device Simulation

by Dietmar Schroeder

59,61€ + 10% CARD

 This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
ENGLISH

Monte Carlo Method For Semiconductor Device Simulation

by Carlo Jacoboni e Paolo Lugli

171,59€ + 10% CARD

 This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
ENGLISH

Compact Transistor Modelling For Circuit Design

by Francois M. Klaassen e Henk C. De Graaff

86,11€ + 10% CARD

 Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs.
ENGLISH

Drift Diffusion Equation And Its Applications In Mosfet Modeling

by Wilfried Hansch

59,61€ + 10% CARD

 To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices.
ENGLISH

Mosfet Models For Vlsi Circuit Simulation - Theory And Practice

by Narain D. Arora

118,59€ + 10% CARD

 Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling.
ENGLISH

Multigrid Methods For Process Simulation

by Slobodan Mijalkovic e Wolfgang Joppich

59,61€ + 10% CARD

 It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. There are the three "classical" ones, from our point of view: the so-called "1984 Guide" (12J by Brandt, the "Multi-Grid Methods and Applications" (49J by Hackbusch and the so-called "Fundamentals" (132J by Stiiben and Trottenberg.
ENGLISH

Speech Motor Dynamics In Stuttering

~~121,66€~~ 85,16€ 30% OFF

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 The present book arose from a conference on Speech Motor Dynamics in Stuttering held at the University of Nijmegen in Nijmegen, the Netherlands from June 13-15, 1985.
ENGLISH

Spinal Cord Monitoring - Basic Principles, Regeneration, Pathophysiology, And Clinical Aspects

~~175,73€~~ 123,01€ 30% OFF

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 During the last decades, research on spinal cord has attracted a great deal of attention because of problems such as sensory-motor and autonomic dysfunctions associated with traumatic and other injuries. Recording of spinal cord evoked potentials is one of the most promising approaches to understand the spinal cord function.
ENGLISH

Solving Nonlinear Partial Differential Equations With Maple And Mathematica

by Carlos Lizarraga-Celaya e Inna Shingareva

~~148,70€~~ 104,09€ 30% OFF

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 starting from an analytical derivation of exact governing equations, constructing discretizations and analytical formulas of a numerical method, performing numerical procedure, obtaining various visualizations, and comparing the numerical solution obtained with other types of solutions considered in the book, e.g.
ENGLISH

Kareem

by Osama Gad

OUT OF STOCK OR NOT AVAILABLE
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