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Strain-Induced Effects In Advanced Mosfets
language: english
Publisher:
SPRINGER VERLAG GMBH, August of 2016 ‧
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SYNOPSIS
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
DETAILS
| Property | Description |
|---|---|
| ISBN: | 9783709119334 |
| Publisher: | SPRINGER VERLAG GMBH |
| Release Date: | August of 2016 |
| Language: | English |
| Dimensions: | 168 x 240 x 20 mm |
| Cover: | Softcover |
| Pages: | 252 |
| Format: | Book |
| Collection: | Computational Microelectronics |
| Categories: |
Books in English
>
Engineering
>
Electricity and Energy
|
| EAN: | 9783709119334 |
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