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Transient Electro-Thermal Modeling On Power Semiconductor Devices

by Enrico Santi, Jerry Hudgins, Bin Du e Tanya Kirilova Gachovska
language: english
Publisher: Springer International Publishing AG, November of 2013 ‧
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The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device.

Transient Electro-Thermal Modeling On Power Semiconductor Devices

by Enrico Santi, Jerry Hudgins, Bin Du e Tanya Kirilova Gachovska

Property Description
ISBN: 9783031013782
Publisher: Springer International Publishing AG
Release Date: November of 2013
Language: English
Dimensions: 191 x 235 x 20 mm
Cover: Softcover
Pages: 68
Format: Book
Collection: Synthesis Lectures On Power Electronics
Categories: Books in English > Engineering > Electricity and Energy
EAN: 9783031013782

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