Hf-Based High-K Dielectrics

Process Development, Performance Characterization, And Reliability

by Jack C. Lee e Young Hee Kim
language: english
Publisher: MORGAN & CLAYPOOL PUBLISHERS, October of 2005 ‧
OUT OF STOCK OR NOT AVAILABLE
Sell ​​your book
Chip density and performance have been driven by scaling of semiconductor devices. This book tells how SiO2 gate dielectrics have reached its minimum thickness due to direct tunneling current and reliability concerns. Therefore, high-k dielectrics attracted more attention from industries as the replacement of conventional SiO2 gate dielectrics.

Hf-Based High-K Dielectrics

Process Development, Performance Characterization, And Reliability

by Jack C. Lee e Young Hee Kim

Property Description
ISBN: 9781598290042
Publisher: MORGAN & CLAYPOOL PUBLISHERS
Release Date: October of 2005
Language: English
Cover: Softcover
Pages: 92
Format: Book
Categories: Books in English > Engineering > Electricity and Energy
EAN: 9781598290042