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Gallium Nitride-Enabled High Frequency And High Efficiency Power Conversion eBook

language: english
Publisher: Springer International Publishing, May of 2018 ‧
131,84€
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This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.


  • Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
  • Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
  • Enables design of smaller, cheaper and more efficient power supplies.

Gallium Nitride-Enabled High Frequency And High Efficiency Power Conversion

Property Description
ISBN: 9783319779942
Publisher: Springer International Publishing
Release Date: May of 2018
Language: English
Format: eBook
File Format and Compatibility:
Collection: Integrated Circuits And Systems
Categories: eBooks in English > Engineering > Electricity and Energy
eBooks in English > Others
EAN: 9783319779942
Acessibilidade: Ver características de acessibilidade indicadas pelo editor

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