Gallium Nitride-Enabled High Frequency And High Efficiency Power Conversion eBook
SINOPSE
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.
- Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
- Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
- Enables design of smaller, cheaper and more efficient power supplies.
DETALHES
| Propriedade | Descrição |
|---|---|
| ISBN: | 9783319779942 |
| Editor: | Springer International Publishing |
| Data de Lançamento: | maio de 2018 |
| Idioma: | Inglês |
| Tipo de produto: | eBook |
| Formato e Compatibilidade: | |
| Coleção: | Integrated Circuits And Systems |
| Classificação Temática: |
eBooks em Inglês
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Engenharia
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Eletricidade e Energia
eBooks em Inglês > Outros |
| EAN: | 9783319779942 |
| Acessibilidade: | Ver características de acessibilidade indicadas pelo editor |
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